4n60 1 / 10 may.2015-rev.00 www.dyelec.com 1. gate 2. drain 3. source pin definition: product summary v ds (v) r ds(on) ( ?) i d (a) 600 2.4 @ v gs =10v 4 600v n-channel power mosfet absolute maximum ratings (t c =25c, unless otherwise specified) r ds(on) <2.4? @ v gs =10v fast switching capability lead free in compliance with eu rohs directive. green molding compound ordering information case: to-251,to-252,to-220,ito-220 to-262,to-263 package parameter symbol ratings unit drain-source voltage v dss 600 v gate-source voltage v gss 30 v continuous drain current i d 4.0 a pulsed drain current (note 2) i dm 16 a avalanche energy single pulsed (note 3) e as 217 mj power dissipation to-220/to-262/to-263 p d 106 w ito-220 44 w to-251/to-252 77 w junction temperature t j +150 c operating temperature t opr -55 ~ +150 c storage temperature t stg -55 ~ +150 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitive rating : pulse width limit ed by maximum junction temperature 3. l = 30mh, i as = 3.7 a, v dd = 50v, r g = 25 ? , starting t j = 25c part no. package packing dmp4n60-tu to-251 75pcs / tube dmd4n60-tr to-252 2.5kpcs / 13 " reel dmt4n60-tu to-220 50pcs / tube dmf4n60-tu ito-220 50pcs / tube DMD4N60-TU to-252 75pcs / tube block diagram d g s dmk4n60-tu to-262 50pcs / tube dmg4n60-tu to-2 63 50pcs / tube dmg4n60-tr to-2 63 800pcs / 13" reel
2 / 10 4n60 600v n-channel power mosfet electrical characteristics (t c =25c, unless otherwise specified) parameter symbol t est conditions typmin max unit off characteristics drain-source breakdown voltage bv dss gs v = 0v, i d = 250 a 600 v drain-source leakage current i dss v ds = 600v, v gs = 0v 1 a gate-source leakage current forward i gss v gs = 30v, v ds = 0v 100 na reversee vgs = -30v, v ds = 0v -100 na on characteristics gate threshold voltage v gs ( th ) ds v = v gs , i d = 250 a 2.0 4.0 v static drain-source on-state resistance r ds ( on ) v gs =10v,i d = 2.0a 1.9 2.4 ? dynamic characteristics input capacitance c iss v ds = 25v, v gs = 0v, f = 1mhz 550 pf output capacitance c oss pf 80 reverse transfer capacitance c rss pf 30 switching characteristics turn-on delay time t d( on ) v dd = 300v, i d = 4.0a, r g = 25 ? (note 1, 2) 35 ns turn-on rise time t r ns 80 turn-off delay time t d( off ) ns 160 turn-off fall time t f 120 ns total gate charge q g v ds = 480v,i d = 4.0a, v gs = 10v (note 1, 2) 80 nc gate-source charge q gs nc 5 gate-drain charge q gd nc 20 source- drain diode ratings and characteristics drain-source diode forward voltage v sd v gs =0v,i s =4a 1.4 v maximum continuous drain-source diode forward current i s 4 a maximum pulsed drain-source diode forward current i sm 16 a reverse recovery time t rr v gs = 0 v, i s = 4a, di f /dt = 100 a/ s (note 1) 400 ns reverse recovery charge q rr c 1.7 notes: 1. pulse test: pulse width 300 s, duty cycle 2% 2.. essenti ly independent of operating temperature may.2015-rev.00 www.dyelec.com thermal data parameter symbol rating unit junction to ambient to-220/ito-220 to-262/to-263 ja 62.5 c/w to-251/ to-252 110 junction to case jc 2.35 c/w ito-220 5 .5 to-251/ to-252 2. 9 to-220/ito-220 to-262/to-263
3 / 10 test circ uits and waveforms 4n60 600v n-channel power mosfet same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * dv/dt controlled by r g * sd controlled by pulse period * d.u.t.-device under test - + peak diode recovery dv/dt test circuit p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) v gs = p.w. period peak diode recovery dv/dt waveforms may.2015-rev.00 www.dyelec.com
4 / 10 test circuits and waveforms(cont.) 4n60 600v n-channel power mosfet switching test circuit switching waveforms gate charge test circuit gate charge waveform v dd bv dss i as i d(t) v ds(t) unclamped inductive switching test circuit t p time unclamped inductive switching waveforms may,2015-rev.00 www.dyelec.com
5 / 10 typical characteristics 4n60 600v n-channel power mosfet drain-source breakdown voltage, bv dss (normalized) (v) drain-source on-resistance, r ds(on) (normalized) ( ? ) 10 1 10 0.1 1 drain-to-source voltage, v ds (v) on-state characteristics 0.1 2 gate-source voltage, v gs (v) transfer characteristics 46 810 150 notes: 1. v ds =50v 2. 250s pulse test 10 1 0.1 25 5.0v notes: 1.. 50s pulse test 2. t c =25 v gs top:op: 9v 8v 7v 6v 5.5v 5 v bottorm:5.0v may,2015-rev.00 www.dyelec.com
4n60 600v n-channel power mosfet typical characteristics(cont.) 1200 0 0.1 drain-sourcevoltage, v ds (v) 1000 200 11 0 c iss 800 600 notes: 1. v gs =0v 2. f = 1mhz c iss= c gs +c gd (c ds =shorted) c oss =c ds +c gd c rss =c gd capacitance characteristics (non-repetitive) 0 total gate charge, q g (nc) 5 15 25 note: i d =4a 8 10 12 10 6 4 2 0 v ds =120v v ds =300v v ds =480v 20 gate charge characteristics c oss c rss 400 6 / 10 may,2015-rev.00 www.dyelec.com thermal response, jc (t) p d (w)
7 / 10 t o - 220 mechanical drawing it o-220 m echanical drawing 4n60 600v n-channel power mosfet may,2015-rev.00 www.dyelec.com
4n60 6 0 0v n-channel power mosfet 8 / 10 may,2015-rev.00 www.dyelec.com to-262 mechanical drawing to-263 mechanical drawing
9 / 10 to-251 mechanical drawing to-252 mechanical drawing 4n60 600v n-channel power mosfet may,2015-rev.00 www.dy elec.com
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